Solar cells having ultrathin active layers

Details Solar cells having ultrathin active layers Solar cells having ultrathin active layers

1979-07-16

1983-03-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136246, 136258, 136259, 136261, H01L 3106

Patent

active

043762280

ABSTRACT:
Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes multiple passes through the thin semiconductor layers.

REFERENCES:
patent: 4166919 (1979-09-01), Carlson
D. Redfield, "Enhanced Photovoltaic Performance of Thin Silicon Films By Multiple Light Passes," Conf. Record, 11th IEEE Photovoltaic Specialists Conf. (1975), pp. 431-432.

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