Solar cells based on indium phosphide

Details Solar cells based on indium phosphide Solar cells based on indium phosphide

1984-07-16

1986-05-27

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136261, 136262, 357 30, H01L 3106

Patent

active

045916543

ABSTRACT:
An InP solar cell having a p-type InP single crystal substrate having a carrier concentration of 2.times.10.sup.16 -2.times.10.sup.18 cm.sup.-3, an n-type InP layer containing a dopant of at least one element selected from VIA group including S and Se disposed on said substrate with a thickness of 0.05-1 .mu.m, said n-type InP layer having a carrier concentration of 5.times.10.sup.17 -1.times.10.sup.19 cm.sup.-3, a grid electrode arranged on said n-type InP layer, and an anti-reflection coating formed on said n-type InP layer and said grid electrode. The solar cell has a high efficiency and superior radiation resistance characteristics.

REFERENCES:
patent: 4278474 (1981-07-01), Blakeslee et al.
patent: 4370510 (1983-01-01), Stirn
A. Yoshikawa et al., Japan. J. Appl. Phys., vol. 20 (1981), Supplement 20-2, pp. 113-117.
G. W. Turner et al., "High-Efficiency InP Homojunction Solar Cells", Appl. Phys. Lett., vol. 37, pp. 400-402 (1980).

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