Solar cell with a back-surface field

Details Solar cell with a back-surface field Solar cell with a back-surface field

1998-12-16

2000-08-01

Diamond, Alan

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136255, 136249, 136252, 136244, 257461, 257464, 257437, H01L 3118, H01L 31068, H01L 310288

Patent

active

060969687

ABSTRACT:
For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 .mu.m at 900 to 1200.degree. C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.

REFERENCES:
patent: 4158591 (1979-06-01), Avery et al.
patent: 4577393 (1986-03-01), Schmidt
patent: 5899704 (1999-05-01), Schlosser et al.
14.sup.TH IEEE Photovoltaic Specialists Conference, Jan. (1980), R.E. Thomas et al, Solid Source Diffusion Process for Silicon Solar Cells, pp. 811-814.
17.sup.TH IEEE Photovoltaic Specialitsts Conference, May (1984), M. Gillanders et al, Low Alpha, Boron BSF Solar Cell, pp. 138-143.
11.sup.TH EC Photovoltaic Solar Energy Conference, Oct. (1992), J. Nijs et al, Towards 16% Efficient Polycrystalline Silicon Solar Cells, Using A Relatively Simple Technology, pp. 164-167.
Solar Cells, vol. 17, No. 1, Mar. (1986), A. Rohatgi et al, High-Efficiency Silicon Solar Cells: Development, Current Issues and Future Directions, pp. 119-133.
Journal of the Electrochemical Society, vol. 134, No. 12, Dec. (1987), R.B. Campbell et al, The Fabrication and Analysis of Bifacial Solar Cells From Dendritic Web Silicon Substrates, pp. 3160-3164.
From the catalogue Merck Electronic Chemical, Process Chemicals, pp. 4-14. (Date Unknown).

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