Solar cell structure incorporating a novel single crystal silico

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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252 623E, 357 30, 357 63, 428641, H01L 3106

Patent

active

043920110

ABSTRACT:
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

REFERENCES:
patent: 4113514 (1978-09-01), Pankove et al.

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