Solar cell, solar cell module, and method of manufacturing...

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S244000, C438S096000

Reexamination Certificate

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07902454

ABSTRACT:
An i-type amorphous silicon layer14and a p-type amorphous silicon layer15are formed on a part of an inner wall of a through hole of an n-type single-crystal silicon substrate11. Further, an i-type amorphous silicon layer12and an n-type amorphous silicon layer13are formed on a part of the inner wall of the through hole of the n-type single-crystal silicon substrate11. The inner wall surface of the through hole is covered with the i-type amorphous silicon layer14and the i-type amorphous silicon layer12.

REFERENCES:
patent: 5935344 (1999-08-01), Endo et al.
patent: 6384317 (2002-05-01), Kerschaver et al.
patent: 2006/0219291 (2006-10-01), Hikosaka et al.
patent: 64-082570 (1989-03-01), None

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