1984-03-08
1986-09-16
Edlow, Martin H.
357 30, 357 63, 357 58, 357 4, H01L 4500
Patent
active
046125590
ABSTRACT:
A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.
REFERENCES:
patent: 4342044 (1982-07-01), Ovshinsky
patent: 4396793 (1983-08-01), Madan
patent: 4407710 (1983-10-01), Moustakas
patent: 4460670 (1984-07-01), Ogawa
patent: 4492810 (1985-01-01), Ovshinsky
Hitotsuyanagi Hajime
Igarashi Tadashi
Ishii Masayuki
Kobayashi Tadakazu
Director General of Agency of Industrial Science & Technology
Edlow Martin H.
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