Solar cell of amorphous silicon

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357 30, 357 63, 357 58, 357 4, H01L 4500

Patent

active

046125590

ABSTRACT:
A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.

REFERENCES:
patent: 4342044 (1982-07-01), Ovshinsky
patent: 4396793 (1983-08-01), Madan
patent: 4407710 (1983-10-01), Moustakas
patent: 4460670 (1984-07-01), Ogawa
patent: 4492810 (1985-01-01), Ovshinsky

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