Solar cell manufacturing method

Metal working – Method of mechanical manufacture – Assembling or joining

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136256, 136258, 427 74, 427 94, H01L 3118

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046400010

ABSTRACT:
Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250.degree. C. and 600.degree. C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.

REFERENCES:
patent: 4253881 (1981-03-01), Hezel
patent: 4359487 (1982-11-01), Schneider
patent: 4451969 (1984-06-01), Chaudhuri
T. G. Sparks et al, Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 783-786.
F. W. Sexton, Solar Energy Materials, vol. 7, pp. 1-14 (1982).

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