Solar cell containing silicon and chalcopyrite semiconductor...

Details Solar cell containing silicon and chalcopyrite semiconductor... Solar cell containing silicon and chalcopyrite semiconductor...

2011-04-05

2011-04-05

Ridley, Basia (Department: 1725)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S258000, C136S261000, C136S262000, C136S264000, C136S265000

Reexamination Certificate

active

07919710

ABSTRACT:
A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.

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Vervaet, A. et al., “Screen Printing of CIS Films for CIS-CdS Solar Cells”, Apr. 1991, 10th European Photovoltaic Solar Energy Conference, pp. 900-903.
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Yano, Yoshihiko et al., JP13007365A, Publication Date Jan. 12, 2001, English Human Translation Document, pp. 1-27.

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