Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2007-03-27
2009-11-10
Baptiste, Wilner Jean (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S296000, C438S337000, C438S462000, C257S117000, C257S118000, C257S170000
Reexamination Certificate
active
07615391
ABSTRACT:
A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.
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Ohtsuka Hiroyuki
Ojima Satoyuki
Takahashi Masatoshi
Watabe Takenori
Baptiste Wilner Jean
Oliff & Berridg,e PLC
Shin-Etsu Chemical Co. , Ltd.
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