Solar cell and method for making a solar cell

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C438S098000, C438S068000, C257S457000, C257S431000

Reexamination Certificate

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06846984

ABSTRACT:
A solar cell with buried contacts in recesses (7) on a first surface (2). On a lateral face (4), a metal layer (12) is produced. The metal layer (12) extends into a lateral zone (9) of a second surface (3) opposite the first surface (2). The metal layer serves as a first electrode (14). On the second surface (3) a second electrode (15), electrically separate from the first electrode (14), is produced so that the solar cell is provided with a back connection.

REFERENCES:
patent: 3278811 (1966-10-01), Mori
patent: 3350775 (1967-11-01), Iles
patent: 4361950 (1982-12-01), Amick
patent: 4610077 (1986-09-01), Minahan et al.
patent: 4726850 (1988-02-01), Wenham et al.
patent: 4989059 (1991-01-01), Micheels et al.
patent: 5082791 (1992-01-01), Micheels et al.
patent: 5258077 (1993-11-01), Shahryar
patent: 5620904 (1997-04-01), Hanoka
patent: 5665175 (1997-09-01), Safir
patent: 6441297 (2002-08-01), Keller et al.
patent: 20030102022 (2003-06-01), Fath et al.
patent: 43 11 173 (1993-10-01), None
patent: DE 43 11 173 (1993-10-01), None
patent: 43 33 426 (1994-12-01), None
patent: DE 43 33 426 (1994-12-01), None
patent: 0 567 764 (1993-11-01), None
patent: EP 0 567 764 (1993-11-01), None
patent: 5-75148 (1993-03-01), None
patent: WO-9948136 (1999-09-01), None
Kress et al, “Low-Cost Back Contact Silicon Solar Cells,” IEEE Transactions on Electron Devices, vol. 46, No. 10, pp. 2000-2004, Oct. 1999.*
Jooss et al, “17% Back Contact Buried Contact Solar Cells,”16th European Solar Energy Conference, pp. 1124-1127, May 2000.*
Jooss et al., “Back Contact Buried Contact Solar Cells with Metallization Wrap Around Electrodes,” 28th IEEE Photovoltaic Specialists Conference, pp. 176-179, Sep. 2000.*
Faika et al “Simplification of EWT (Emitter Wrap-Through Solar Cell Fabrication Using Al-P-Codifussion,” 28th IEEE Photovoltaic Specialists Conference, pp. 260-263, Sep. 2000.*
Jooss et al., “Process and Technology Development for Back contact Silicon Solar Cells,” 29th IEEE Photovoltaic Specialists Conference, pp. 122-125, May 2002.*
Van Kerschaver et al. “A novel silicon solar cell structure . . . ” pp. 1479-1482, 2nd Word Conference on Photovoltaic Solar Energy Conversion, Jul. 1998.
Schonecker et al. “Attacking limiting factors . . . ” pp. 1677-1680, 2nd World Conference on Photovoltaic Solar Energy Conversion, Jul. 1998.
Thorp “A low-temperature deposited silicon . . . ” pp.1535-1538, 2nd World Conference on Photovoltaic Solar Energy Conversion, Jul. 1998.
Gee et al. “Emitter wrap-through solar cell” pp. 265-270, IEEE, 1993.
Kress et al. “Low-cost back contact . . . ” pp. 1547-1550, 2nd World Conference on Photovoltaic Solar Energy Conversion, Jul. 1998.
Arabito et al. “Electroless metallizations...” pp. 1558-1561, 2nd World Conference on Photovoltaic Solar Energy Conversion, Jul. 1998.
Joss et al. “17% back contact . . . ” pp. 1124-1127, 16thEuropean Photovoltaic Solar Energy Conference, May 2000.
Yuwen et al. “Burried-contact high efficiency . . . ” pp. 167-172, Solar Energy Materials and Solar Cells, vol. 48, (1997).
Kuhn et al. “Multicrystalline burried-contact solar cells . . . ” pp. 672-677, 14thEuropean Photovoltaic Solar Energy Conference (Jul. 1997).

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