Solar cell and manufacturing method of the solar cell

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S258000, C136S255000, C136S252000, C438S096000, C438S094000, C438S057000, C257S053000, C257S063000, C257S184000, C257S200000, C257S201000, C257S052000

Reexamination Certificate

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08053666

ABSTRACT:
A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein.

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