Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1998-04-28
2000-10-10
Codd, Bernard
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136258, 136261, 438 87, 438 96, H01L 3106
Patent
active
061303801
ABSTRACT:
In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.
REFERENCES:
patent: 4837607 (1989-06-01), Kemmer et al.
patent: 5543333 (1996-08-01), Holdermann
patent: 5738732 (1998-04-01), Nakamura et al.
"An Optimization Study of Si Point-Contact Concentrator Solar Cells," R.A. Sinton et al., 19th IEEE PVSC, 1987, pp. 1201-1208.
"35% efficient nonconcentrating novel silicon solar cell," Jianming Li et al., Appl. Phys. Lett, vol. 60, No. 18, May 4, 1992, pp. 2240-2242.
"A New.sup.+ PN.sup.+ Structure with Back Side Floating Junction for High Efficiency Silicon Solar Cells," Moustafa Y. Ghannam, 22nd IEEE PVSC, 1991, pp. 284-289.
Codd Bernard
Sharp Kabushiki Kaisha
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