Solar cell

Details Solar cell Solar cell

1975-11-20

1977-06-14

Mack, John H.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 30, 357 56, 357 65, H01L 3106

Patent

active

040295184

ABSTRACT:
A P-type diffusion layer is formed on an N-type silicon semiconductor wafer to establish a P-N junction in a solar cell, the diffusion layer being exposed to radiation. A pair of electrodes are formed on the surfaces of the diffusion layer and the semiconductor wafer in a desired configuration in order to provide output of electric energy generated by the solar cell. The diffusion layer is formed in such a manner that the layer has a thickness of around 3 .mu.m at areas where the electrode is formed and has a thickness of around or below 0.5 .mu.m at regions on which the electrode is not formed. With such an arrangement, radiation having a wavelength of about or shorter than 400 m.mu.m can be used for performing optoelectric generation.

REFERENCES:
patent: 2196830 (1940-04-01), Hewlett
patent: 2993945 (1961-07-01), Huth
patent: 3053926 (1962-09-01), Ben-Sira et al.
patent: 3094439 (1963-06-01), Mann et al.
patent: 3682708 (1972-08-01), Bennett
patent: 3802924 (1974-04-01), Pschunder
patent: 3904453 (1975-09-01), Revesz et al.
patent: 3936319 (1976-02-01), Anthony et al.
H. J. Hovel et al., "Method for Si and GaAs Solar Cell Diffusion," IBM Tech. Disc. Bull., vol. 16, No. 7, pp. 2083-2084, Dec. 1973.
L. Forbes, "Photodiode Having Ion Implant For Improved Light Sensitivity," IBM Tech. Disc. Bull., vol. 15, No. 4, p. 1348, Sept. 1972.

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