SOI wafers with 30-100 Å buried oxide (BOX) created...

Details SOI wafers with 30-100 Å buried oxide (BOX) created... SOI wafers with 30-100 Å buried oxide (BOX) created...

2007-01-23

2007-01-23

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S409000, C438S479000, C438S517000

Reexamination Certificate

active

10957833

ABSTRACT:
A method of fabricating a SOI wafer having a gate-quality, thin buried oxide region is provided. The wafer is fabricating by forming a substantially uniform thermal oxide on a surface of a Si-containing layer of a SOI substrate which includes a buried oxide region positioned between the Si-containing layer and a Si-containing substrate layer. Next, a cleaning process is employed to form a hydrophilic surface on the thermal oxide. A carrier wafer having a hydrophilic surface is provided and positioned near the substrate such that the hydrophilic surfaces adjoin each other. Room temperature bonding is then employed to bond the carrier wafer to the substrate. An annealing step is performed and thereafter, the Si-containing substrate of the silicon-on-insulator substrate and the buried oxide region are selectively removed to expose the Si-containing layer.

REFERENCES:
patent: 6380046 (2002-04-01), Yamazaki
patent: 6455398 (2002-09-01), Fonstad et al.
patent: 2002/0185684 (2002-12-01), Campbell et al.

Affiliated with

Also associated with

Rating

SOI wafers with 30-100 Å buried oxide (BOX) created... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI wafers with 30-100 Å buried oxide (BOX) created..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI wafers with 30-100 Å buried oxide (BOX) created... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3736540