SOI wafer producing method, and wafer separating jig

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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Details

C414S935000

Reexamination Certificate

active

06998329

ABSTRACT:
In the process of fabricating an SOI wafer based on the Smart Cut® Process, a stack34of an SOI wafer39and a residual wafer38are separated into the individual wafers using a wafer separation jig1of this invention. The wafer separation jig1comprises a supporting plane1pon which the stack34is supported in the thickness-wise direction, and a stepped portion2disposed on the supporting plane1p, and having a height adjusted so as to stop movement-by-sliding of the lower wafer of the stack, but so as to allow movement-by-sliding of the upper wafer relative to the lower wafer. Both wafers are separated from each other by inclining the supporting plane1pwith the stack34placed thereon, so as to allow the upper wafer to move by sliding as being driven by its own weight in the in-plane direction relative to the lower wafer. This method is successful in effectively suppressing friction between the wafers, and thus in preventing the wafer surface from being scratched.

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