SOI wafer and method for the preparation thereof

Details SOI wafer and method for the preparation thereof SOI wafer and method for the preparation thereof

1996-08-15

1999-12-07

McCamish, Marion

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438455, 438977, 156153, 148DIG12, H01L 21762

Patent

active

059982810

ABSTRACT:
Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a doped layer with a dopant in a high concentration on the mirror-polished surface of a second mirror-polished semiconductor silicon wafer as the bond wafer; bringing the base wafer and the bond wafer into contact each with the other at the oxidized surface film and the doped layer; and subjecting the thus contacted semiconductor silicon wafers to a heat treatment to effect integral bonding thereof into a precursor of an SOI wafer. The improvement of the invention is accomplished by polishing the surface of the doped layer on the bond wafer before the base wafer and the bond wafer are joined by contacting at the oxidized surface film and the doped layer so that a great improvement can be obtained in the bonding strength between layers.

REFERENCES:
patent: 5024723 (1991-06-01), Goesele et al.
patent: 5213986 (1993-05-01), Pinker et al.
patent: 5218226 (1993-06-01), Slatter et al.
patent: 5286670 (1994-02-01), Kang et al.
patent: 5514235 (1996-05-01), Mitani et al.
patent: 5705421 (1998-01-01), Matsushita et al.
K. Imai, Japanese Journal of Applied Physics, 30(6), 1154-1157 (1991).

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