SOI wafer and a method of producing the same

Details SOI wafer and a method of producing the same SOI wafer and a method of producing the same

2008-04-15

2008-04-15

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C065S059500, C065S085000, C065SDIG008

Reexamination Certificate

active

07357839

ABSTRACT:
The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees, and a method of producing an SOI wafer comprising at least bonding a base wafer and a bond wafer consisting of a silicon single crystal, and forming an SOI layer by thinning the bond wafer, wherein the bond wafer is used where a plain orientation thereof is off-angled from {110} only in a direction to <100>, and an off-angle is from 5 minutes to 2 degrees. Thereby, there can be provided an SOI wafer having both high uniformity of film thickness and good micro-roughness to be suitable for fabricating high speed devices, and provided a method of producing the SOI wafer.

REFERENCES:
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 2004/0032003 (2004-02-01), Ohmi et al.
patent: A 57-112074 (1982-07-01), None
patent: B2 5-46086 (1993-07-01), None
patent: A 11-307747 (1999-11-01), None
patent: B2 3048201 (2000-03-01), None
patent: A 2002-289819 (2002-10-01), None
Saito et al., “Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide,” Symposium on VLSI Technology Digest of Technical Papers, pp. 176-177, 2000.

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