SOI-type semiconductor device with variable threshold voltages

Details SOI-type semiconductor device with variable threshold voltages SOI-type semiconductor device with variable threshold voltages

1997-03-05

1998-09-29

Gaffin, Jeffrey A.

Electrical transmission or interconnection systems

Plural supply circuits or sources

Substitute or emergency source

257901, 327530, 327534, 327535, G05F 110

Patent

active

058148990

ABSTRACT:
In an SOI-type semiconductor device, a power supply voltage is applied to back gates of P-channel MOS transistors in a standby mode, and a voltage lower than the power supply voltage is applied to the back gates of the P-channel MOS transistors in an active mode. A ground voltage is applied to back gates of N-channel MOS transistors in the standby mode, and a voltage higher than the ground voltage is applied to the back gates of the N-channel MOS transistors in an active mode.

REFERENCES:
patent: 4956563 (1990-09-01), Schornack
patent: 5278102 (1994-01-01), Horie
patent: 5280455 (1994-01-01), Kanaishi
patent: 5394017 (1995-02-01), Catano et al.
patent: 5473277 (1995-12-01), Furumochi
patent: 5497023 (1996-03-01), Nakazato et al.
patent: 5506540 (1996-04-01), Sakurai et al.
patent: 5555151 (1996-09-01), Baker et al.

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