SOI type semiconductor device and manufacturing method therefor

Details SOI type semiconductor device and manufacturing method therefor SOI type semiconductor device and manufacturing method therefor

1993-01-21

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 32, 437 59, H01L 2186

Patent

active

053526244

ABSTRACT:
A lateral bipolar transistor including a transistor forming region provided on an insulating substrate; a first impurity diffusing region provided on the insulating substrate on one side of the transistor forming region; an emitter region formed in a first portion of the transistor forming region adjacent to the first impurity diffusing region, the emitter region being formed by diffusing a first conduction type of impurity from the first impurity diffusing region into the first portion of the transistor forming region; a base region formed in a second portion of the transistor forming region adjacent to the emitter region, the base region being formed by diffusing a second conduction type of impurity from the first impurity diffusing region into the second portion of the transistor forming region; and a collector region formed in a third portion of the transistor forming region adjacent to the base region. Accordingly, a base width can be reduced, and a dimensional accuracy of the base width can be improved.

REFERENCES:
patent: 5073506 (1991-12-01), Maszara et al.
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5187109 (1993-02-01), Cook et al.

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