SOI trench lateral IGBT

Details SOI trench lateral IGBT SOI trench lateral IGBT

2011-03-22

2011-03-22

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE21564, C257SE21388, C257SE29201

Reexamination Certificate

active

07910962

ABSTRACT:
To enable driving at a high withstand voltage and a large current, increase latchup immunity, and reduce ON resistance per unit area in an IGBT, a trench constituted by an upper stage trench and a lower stage trench is formed over an entire wafer surface between an n+emitter region and a p+collector region, and the trench is filled with a trench-filling insulating film. Thus, a drift region for supporting the withstand voltage is folded in the depth direction of the wafer, thereby lengthening the effective drift length. An emitter-side field plate is buried in the trench-filling insulating film to block a lateral electric field generated on the emitter side of the trench-filling insulating film, and as a result, an electric field generated at a PN junction between an n−drift region and a p base region is reduced.

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