SOI substrate having a high heavy metal gettering effect for sem

Details SOI substrate having a high heavy metal gettering effect for sem SOI substrate having a high heavy metal gettering effect for sem

1995-10-13

1998-06-30

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of silicon containing

428448, 428700, 428701, 428702, 257347, 257349, 257353, B32B 904

Patent

active

057731527

ABSTRACT:
An SOI substrate comprises a buried silicon oxide layer formed directly under an active silicon layer, and a layer containing phosphorus therein formed under the buried silicon oxide layer. The layer containing phosphorus therein acts as the getter layer, so that an effective gettering of heavy metals can be obtained in a wide temperature range from a low temperature region to a high temperature region. In addition, since the silicon oxide layer exists between the active layer and the getter layer, the diffusion of the phosphorus into the active layer is effectively prevented, and therefore, the phosphorus scarely diffuses to the active layer, so that the device manufactured is subjected to almost no adverse influence of the diffusion of the phosphorus.

REFERENCES:
patent: 4754314 (1988-06-01), Scott
patent: 4916504 (1990-04-01), Nakahara
patent: 5063113 (1991-11-01), Wada

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