Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2004-12-20
2008-03-04
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S517000, C257S526000, C257S350000, C438S360000, C438S345000, C438S328000
Reexamination Certificate
active
07339254
ABSTRACT:
According to an exemplary embodiment, a structure includes a silicon-on-insulator substrate including a buried oxide layer situated over a bulk silicon substrate and a silicon layer situated over the buried oxide layer. The structure further includes a trench formed in the silicon layer and the buried oxide layer, where the trench has a bottom surface and a first and a second sidewall, and where the trench is situated adjacent to an optical region of the silicon-on-insulator substrate. According to this exemplary embodiment, the structure further includes an epitaxial layer situated in the trench and situated on the bulk silicon substrate, where the epitaxial layer and the bulk silicon substrate form a bulk silicon electronic region of the silicon-on-insulator substrate. The structure further includes a base of a bipolar transistor situated on the epitaxial layer, where the base can be silicon-germanium.
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Farjami & Farjami LLP
Fourson George R.
Newport Fab LLC
Parker John M.
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