Fuel and related compositions
Patent
1995-03-23
1995-12-26
Thomas, Tom
Fuel and related compositions
437 62, 437974, 148DIG12, H01L 21265
Patent
active
054784085
ABSTRACT:
There is provided an SOI (Silicon On Insulator) substrate having a thick SOI layer, where crystallographic defects mainly consisting of OSFs (Oxidation Induced Stacking Fault) are practically prevented from occurrence in the SOI layer, according to the present invention.
The manufacturing method for the SOI substrate according to the present invention comprises the following steps of: the silicon oxide film being formed by thermal oxidation on the surface of a first silicon wafer having a concentration of interstitial oxygen under 16 ppma (per JEIDA Standard); the first silicon wafer being superimposed on a second silicon wafer, which is a support for supporting the first silicon wafer, with the silicon oxide film sandwiched therebetween; then the superimposed wafers being heat-treated so as to obtain a bonded wafer; and further the bulk of the first silicon wafer of the bonded wafer being reduced by grinding and then polishing so as to obtain the SOI substrate with the SOI layer of more than 5 .mu.m in thickness, which is a single crystal layer, formed on the second silicon wafer.
REFERENCES:
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5362667 (1994-11-01), Linn et al.
patent: 5366923 (1994-11-01), Beyer et al.
patent: 5366924 (1994-11-01), Easter et al.
Katayama Masatake
Mitani Kiyoshi
Nakazawa Kazushi
Dang Trung
Shin-Etsu Handotai & Co., Ltd.
Thomas Tom
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