Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-03-26
2010-11-09
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S474000, C257S347000, C257S059000, C257S072000, C257SE21568, C257SE21570, C257SE27111
Reexamination Certificate
active
07829433
ABSTRACT:
A manufacturing method of a semiconductor substrate is provided, in which a bonding strength can be increased even when a substrate having low heat resistant temperature, e.g., a glass substrate, is used. Heat treatment is conducted at a temperature higher than or equal to a strain point of a support substrate in an oxidation atmosphere containing halogen, so that a surface of a semiconductor substrate is covered with an insulating film. A separation layer is formed in the semiconductor substrate. A blocking layer is provided. Then, heat treatment is conducted in a state in which the semiconductor substrate and the support substrate are superposed with the silicon oxide film therebetween, at a temperature lower than or equal to the support substrate, so that a part of the semiconductor substrate is separated at the separation layer. In this manner, a single crystal semiconductor layer is formed on the support substrate.
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International Search Report (Application No. PCT/JP2008/056001) Dated Jul. 1, 2008.
Written Opinion (Application No. PCT/JP2008/056001) Dated Jul. 1, 2008.
Ho Tu-Tu V
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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