Soi Substrate

Details Soi Substrate Soi Substrate

1995-11-07

1998-05-19

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

257607, 257611, 257655, 257587, 428336, 428446, 428457, 428704, H01L 2102

Patent

active

057533539

ABSTRACT:
An SOI substrate comprises a silicon supporting substrate, an insulating film formed on the top of the silicon supporting substrate and a silicon active layer formed on the insulating film. The silicon supporting substrate is doped with an impurity at a concentration not less than 1.times.10.sup.17 atoms/cm.sup.3, provided that the impurity is kept in the solid solution state at a solidifying point of silicon. The impurity may comprise boron, phosphorus and arsenic.

REFERENCES:
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patent: 4862244 (1989-08-01), Yamagishi
patent: 4920062 (1990-04-01), Tsunoda
patent: 4927776 (1990-05-01), Soejima
patent: 5013676 (1991-05-01), Horigome
patent: 5293512 (1994-03-01), Nishigoori et al.
patent: 5298449 (1994-03-01), Kikuchi
patent: 5374846 (1994-12-01), Takemura

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