SOI (silicon on insulator) substrate with enhanced gettering eff

Details SOI (silicon on insulator) substrate with enhanced gettering eff SOI (silicon on insulator) substrate with enhanced gettering eff

1994-07-27

1995-08-22

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

Having at least three contiguous layers of semiconductive...

437 61, 437 62, 437 10, 437 12, 148 333, 148DIG12, H01L 2120

Patent

active

054436613

ABSTRACT:
A silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon substrate, a silicon oxide island film is partially provided in a polycrystalline silicon film, and a second single crystal silicon substrate is provided on an entire upper surface of the polycrystalline silicon film. An element isolation trench extends from an upper surface of the second single crystal silicon substrate to an upper surface of the first single crystal silicon substrate, and a silicon oxide film is buried in the element isolation trench. The SOI substrate thus constituted has a high gettering effect for heavy metals.

REFERENCES:
patent: 5194395 (1993-03-01), Wada
patent: 5229305 (1993-07-01), Baker
patent: 5312782 (1994-05-01), Miyazawa
patent: 5327007 (1994-07-01), Imura et al.

Affiliated with

Also associated with

Rating

SOI (silicon on insulator) substrate with enhanced gettering eff does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI (silicon on insulator) substrate with enhanced gettering eff, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI (silicon on insulator) substrate with enhanced gettering eff will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2139131