SOI sense amplifier with body contact structure

Details SOI sense amplifier with body contact structure SOI sense amplifier with body contact structure

1999-06-02

2000-11-28

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

Integrated structure

327566, 257347, H01L 2500

Patent

active

061540919

ABSTRACT:
A self-aligned SOI FET device with an "L" shaped gate structure allows an integral diode junction to be formed between the source and the body of the device. Two devices with this gate geometry can be advantageously placed side-by-side in a single rx opening that could accommodate but a single device with a "T" shaped gate structure. The devices in accordance with the teachings of this invention can be easily formed using standard prior art SOI processing steps. An aspect of this invention includes the use of these novel SOI devices with their body and source connected together in circuit applications, such as memory cell sense amplifiers, where high speed operation commends the use of SOI technology, but physical space considerations have limited their application.

REFERENCES:
patent: 3992637 (1976-11-01), Cassidy
patent: 5317181 (1994-05-01), Tyson
patent: 5405795 (1995-04-01), Beyer
patent: 5526314 (1996-06-01), Kumar
patent: 5627484 (1997-05-01), Tuminaro
patent: 5773864 (1998-06-01), Merrill
patent: 5862089 (1999-01-01), Raad
patent: 5994738 (1999-11-01), Wollesen

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