SOI polysilicon trench refill perimeter oxide anchor scheme

Details SOI polysilicon trench refill perimeter oxide anchor scheme SOI polysilicon trench refill perimeter oxide anchor scheme

2005-07-05

2005-07-05

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S050000, C438S052000

Reexamination Certificate

active

06913941

ABSTRACT:
A method for creating a MEMS structure is provided. In accordance with the method, a substrate (53) is provided having a sacrificial layer (55) disposed thereon and having a layer of silicon (57) disposed over the sacrificial layer. A first trench (59) is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region (61) enclosed by the first trench and a second region (63) exterior to the first trench. A first material (65) is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench (71) is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.

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