SOI Optical semiconductor device

Details SOI Optical semiconductor device SOI Optical semiconductor device

1997-04-21

1998-08-11

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 21, 257436, 257446, H01L 2714, H01L 2715, H01L 3112

Patent

active

057930600

ABSTRACT:
There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.

REFERENCES:
patent: 5629534 (1997-05-01), Inuzuka et al.
"Room-temperature 1.3um electroluminescence from strained Si.sub.1-x Ge.sub.x/ Si quantum wells" Q. Mi et al Applied Physics Letters, vol. 60, No. 25, Jun. 1992, pp. 3177-3179.

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