SOI lateral bipolar transistor with edge-strapped base contact a

Details SOI lateral bipolar transistor with edge-strapped base contact a SOI lateral bipolar transistor with edge-strapped base contact a

1993-07-19

1994-03-29

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257526, 257588, 257593, 257640, 257754, 257756, H01L 2972

Patent

active

052987868

ABSTRACT:
A silicon-on-insulator lateral bipolar transistor having an edge-strapped base contact is disclosed. A thin layer of oxide is deposited on a silicon-on-insulator structure and a layer of polysilicon is deposited on the thin oxide layer that is patterned and etched to form an extrinsic base region of the transistor. The polysilicon extrinsic base is very heavily doped and the thin oxide layer acts as both a diffusion stop and an etch stop during the formation of the extrinsic base. A silicon edge contact region is formed of selective epitaxy or polysilicon to connect the extrinsic base to the intrinsic base formed in the silicon-on-insulator layer.

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patent: 4900689 (1990-02-01), Bajor et al.
patent: 4908324 (1990-03-01), Nihira et al.
patent: 5027177 (1991-06-01), Vasudev
"Lateral Bipolar Transistor with Elevated Base Contact" IBM Technical Disclosure Bulletin, 32(6B)157 (1989) pp. 157-159.

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