Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-02-03
2000-03-14
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
438154, H01L 2712
Patent
active
060376171
ABSTRACT:
A semiconductor integrated circuit device with the SOI structure is provided, which decreases the chip area of wiring lines interconnecting p- and n-channel IGFETs, raising their integration level. This device is comprised of a semiconductor layer formed on an insulating substrate. The semiconductor layer has a first area extending along a first direction and a second area extending along the first direction. The first and second areas are adjacent to one another. A first IGFET of a first conductivity type is formed in the first area of the semiconductor layer. A second IGFET of a second conductivity type opposite to the first conductivity type is formed in the first area of the semiconductor layer. One of a pair of source/drain regions of the second IGFET is electrically connected to one of a pair of source/drain regions of the first IGFET by a first interconnection diffusion region. A third IGFET of the first conductivity type is formed in the second area of the semiconductor layer. One of a pair of source/drain regions of the third IGFET is electrically connected to one of the pair of source/drain regions of the second IGFET by a second interconnection diffusion region.
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Jon M. Stern et al, "Silicon-on-Insulator (SOI): A High Performance ASIC Technology", IEEE 1992 Custom Integrated Circuits Conference, pp. 9.2.1-9.2.4.
Hardy David B.
NEC Corporation
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