Electricity: electrical systems and devices – Electrostatic capacitors – Variable
Patent
1992-03-06
1993-01-05
Griffin, Donald A.
Electricity: electrical systems and devices
Electrostatic capacitors
Variable
437 51, H01G 700, H01L 2702
Patent
active
051776618
ABSTRACT:
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
REFERENCES:
patent: 3758830 (1973-09-01), Jackson
patent: 3893228 (1975-07-01), George et al.
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4040172 (1977-08-01), Kurtz et al.
patent: 4208782 (1980-06-01), Kurtz et al.
patent: 4222815 (1980-09-01), Krechmery
patent: 4332000 (1982-05-01), Petersen
patent: 4592238 (1986-06-01), Busta
patent: 4665610 (1987-05-01), Barth
patent: 4744863 (1988-05-01), Guckel et al.
patent: 4783821 (1988-11-01), Muller et al.
patent: 4808549 (1989-02-01), Mikkor et al.
patent: 4812801 (1989-03-01), Halvis et al.
patent: 4816125 (1989-03-01), Muller et al.
patent: 4838088 (1989-06-01), Murakami
patent: 4849050 (1989-07-01), Evans et al.
patent: 4849071 (1989-07-01), Evans et al.
patent: 4904978 (1990-02-01), Barth et al.
patent: 4982351 (1991-01-01), Kawate et al.
IEEE, "Micromechanical Thin-Film Cavity Structures for Low Pressure and Acoustic Transducer Applications" by Hijab and Muller, 1985, pp. 178-181.
IEDM, "Fabrication Techniques For Integrated Sensor Microstructures" by Guckel and Burns, 1986, pp. 176-179.
IEEE, "A Comparison of Piezoresistance in Polysilicon, Laser Recrystallized Polysilicon and Single Crystal Silicon" by Detry et al., 1985, pp. 278-280.
"Miniature Silicon Capacitance Absolute Pressure Sensor" by Behr et al., 1986.
IEDM, "Micro-Diaphragm Pressure Sensor" by Sugiyama et al., 1986, pp. 184-187.
IEEE, "Modeling Performance of Piezoresistive Pressure Sensors" by Bryzek, 1985, pp. 168-173.
IEEE Transactions on Electron Devices, vol. ED-29, No. 1, Jan. 1982, by Ko et al., pp. 48-56.
Electronics Letters, vol. 20, No. 24, Nov. 22, 1984, by French and Evans, pp. 999-1000.
IEEE Transactions on Electron Devices, vol. 35, No. 8, Aug. 1988, by Spencer et al., pp. 1289-1298.
Philips tech Rev. 33, No. 1, by Gieles et al., pp. 15-20.
"Low Cost Sensors--A Market Overview" by Craft and Whiskin, pp. 1--3.
"Silicon Pressure Transducer Technology For Automotive Applications" by Swartz et al.
"Automotive Silicon Based Pressure Transducers for Fluid Power Applications" by Schuster, pp. 39-45.
IEEE Micro, "A Smart Digital-Readout Circuit for a Capacitive Microtransducer" by Habekotte and Cserveny, Oct. 1984, pp. 44-54.
Sensors and Actuators, 2, "Integrated Sensors: Interfacing Electronics To A Non-Electronic World" by Wise, 1982, pp. 229-237.
IEEE"Polysilicon Layers Lead to a New Generation of Pressure Sensors" by Obermeier, 1985, pp. 430-433.
IEDM, "Planar Processed Polysilicon Sealed Cavities for Pressure Transducer Arrays" by Guckel and Burns, 1984, pp. 223-225.
Sensors and Actuators, 10, "Smart Sensors" by Giachino, 1986, pp. 239-248.
Mat. Res. Soc. Symp Proc., vol. 34, "SOI Technologies: Device Applications and Future Prospects" by Tsaur, 1985, pp. 641-652.
"High-Quality Silicon-On-Insulator Films Prepared by Zone-Melting Recrystallization" by Chen, 1986, pp. 43-51.
Morrison, Jr. Richard H.
Zavracky Paul M.
Griffin Donald A.
Kopin Corporation
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