SOI diaphgram sensor

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

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437 51, H01G 700, H01L 2702

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active

051776618

ABSTRACT:
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

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