SOI by large angle oxygen implant

Details SOI by large angle oxygen implant SOI by large angle oxygen implant

1994-09-23

1996-01-30

Fourson, George

Fishing, trapping, and vermin destroying

437 24, 437 62, 437 41, H01L 2176, H01L 21265

Patent

active

054880041

ABSTRACT:
A new method of forming a silicon-on-insulator device using large tilt-angle implant is described. A first silicon oxide layer is formed on the surface of a semiconductor substrate. A first layer of tungsten is deposited over the silicon oxide layer and patterned. The semiconductor substrate is etched where it is not covered by the patterned tungsten layer to provide a silicon pillar underlying the patterned tungsten layer. A second silicon oxide layer is formed on all exposed surfaces of the silicon pillar and the silicon semiconductor substrate. A second tungsten layer is deposited over all surfaces of the substrate and anisotropically etched to form spacers on the sidewalls of the silicon pillar. An oxygen ion implantation is performed at a tilt angle to form implanted regions within the semiconductor substrate wherein the implanted regions extend and intersect under the silicon pillar. The tungsten layers are removed and the substrate is annealed wherein the implanted regions are transformed into silicon dioxide regions. The silicon oxide layers are removed to complete formation of the silicon-on-insulator device in the manufacture of an integrated circuit.

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"A Fully Depleted Lean-Channel Transistor (Delta)", by Hisamoto et al, IEEE Electron Derice Letters, vol. 11, No. 1 Jan. 1990.
"Selectively Implanting Oxygen Isolation Technology (SIO)", pub in Electronics Letters, May 9, 1985, vol. 21, No. 10, pp. 442-443.

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