SOI-based photonic bandgap devices

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

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Details

C385S002000, C385S008000, C385S014000, C385S015000

Reexamination Certificate

active

11042774

ABSTRACT:
An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.

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patent: 6931191 (2005-08-01), Kitagawa et al.
patent: 2004/0150873 (2004-08-01), Pearsall
patent: 2004/0223768 (2004-11-01), Shastri et al.

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