SOI annealing method

Details SOI annealing method SOI annealing method

2005-02-22

2005-02-22

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S540000, C438S913000, C438S935000

Reexamination Certificate

active

06858508

ABSTRACT:
A method for annealing an SOI in which two annealing steps are followed by a cooling step. During the second annealing step, the annealing temperature is from 993° C. to the melting point of silicon. During the cooling step, the cooling rate is not less than 0.12° C./sec when a temperature is from 993° C. to 775° C.

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