SOI active layer with different surface orientation

Details SOI active layer with different surface orientation SOI active layer with different surface orientation

2007-10-30

2007-10-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S474000, C438S513000, C257SE21170, C257SE21127, C257SE21218, C257SE21248, C257SE21304, C257SE21320

Reexamination Certificate

active

11302770

ABSTRACT:
A wafer having an SOI configuration and active regions having different surface orientations for different channel type transistors. In one example, semiconductor structures having a first surface orientation are formed on a donor wafer. Semiconductor structures having a second surface orientation are formed on a second wafer. Receptor openings are formed on the second wafer. The semiconductor structures having the first surface orientation are located in the receptor openings and transferred to the second wafer. The resultant wafer has semiconductor regions having a first surface orientation for a first channel type of transistor and semiconductor regions having a second surface orientation for a second channel type transistor.

REFERENCES:
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 6616854 (2003-09-01), Jones et al.
patent: 6635543 (2003-10-01), Furukawa et al.
patent: 7125785 (2006-10-01), Cohen et al.
patent: 2005/0070077 (2005-03-01), Guarini et al.
patent: 2006/0049460 (2006-03-01), Chen et al.
patent: 2006/0105536 (2006-05-01), Cheng et al.
M. Yang, et al., High Performance CMOS Fabricated on Hybrid Substrate With Different Crystal Orientations, 0-7803-7873-3/03, 2003 IEEE.
B. Doris, et al., A Simplified Hybrid Orientation Technology (SHOT) for High Performance CMOS, date unknown.
His-Jen J. Yeh, et al., Fluidic Self-Assembly for the Integration of GaAs Light-Emitting Diodes on Si Substrates, 1041-1135/94, 1994 IEEE.
Jennifer Ouellette, Exploiting Molecular Self-Assembly, Dec. 2000, American Institute of Physics pp. 26-29.
Olubunmi O. Adetutu, et al., Modified Dual Substrate Orientation, Filing Date—Apr. 27, 2005, U.S. Appl. No. 11/209,869.

Affiliated with

Also associated with

Rating

SOI active layer with different surface orientation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI active layer with different surface orientation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI active layer with different surface orientation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3876765