Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction
Reexamination Certificate
2007-06-04
2010-10-12
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With specified shape of pn junction
C257SE29005, C257S046000, C257S011000
Reexamination Certificate
active
07812427
ABSTRACT:
A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.
REFERENCES:
patent: 2005/0258455 (2005-11-01), Schulze et al.
patent: 10243758 (2004-04-01), None
Felsl Hans-Peter
Mauder Anton
Pfaffenlehner Manfred
Schulze Hans-Joachim
Bryant Kiesha R
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Wright Tucker
LandOfFree
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