Soft proton isolation process for an acoustic charge transport i

Details Soft proton isolation process for an acoustic charge transport i Soft proton isolation process for an acoustic charge transport i

1992-04-09

1995-05-23

Nelson, Peter A.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

437 22, H01L 2984

Patent

active

054183758

ABSTRACT:
A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for an ACT device; providing a circuit element semiconductor layer in the epitaxial layer for construction of an integrated circuit element, the layer having a thickness substantially less than the thickness of the epitaxial layer and having a carrier concentration substantially greater than the ACT epitaxial layer; laterally isolating the semiconductor layer from other regions of the ACT epitaxial layer; and bombarding the semiconductor layer with protons at a dose sufficient to provide significant vertical electrical isolation from underlying regions of the epitaxial layer semi-insulating with minimal detrimental effect on the electrical characteristics of the semiconductor layer.

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