Soft proton isolation process for an acoustic charge transport i

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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Other Related Categories

437 22, H01L 2984

Type

Patent

Status

active

Patent number

054183758

Description

ABSTRACT:
A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for an ACT device; providing a circuit element semiconductor layer in the epitaxial layer for construction of an integrated circuit element, the layer having a thickness substantially less than the thickness of the epitaxial layer and having a carrier concentration substantially greater than the ACT epitaxial layer; laterally isolating the semiconductor layer from other regions of the ACT epitaxial layer; and bombarding the semiconductor layer with protons at a dose sufficient to provide significant vertical electrical isolation from underlying regions of the epitaxial layer semi-insulating with minimal detrimental effect on the electrical characteristics of the semiconductor layer.

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