Fishing – trapping – and vermin destroying
Patent
1991-03-29
1994-10-25
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 24, 437 62, 437 53, 148DIG84, 148DIG128, H01L 21265
Patent
active
053588770
ABSTRACT:
A method for electrically isolating an integrated circuit element in an acoustic charge transport device comprises the steps of providing a semi-insulating substrate; providing an epitaxial layer with a thickness and carrier concentration appropriate for an ACT device; providing a circuit element semiconductor layer in the epitaxial layer for construction of an integrated circuit element, the layer having a thickness substantially less than the thickness of the epitaxial layer and having a carrier concentration substantially greater than the ACT epitaxial layer; laterally isolating the semiconductor layer from other regions of the ACT epitaxial layer; and bombarding the semiconductor layer with protons at a dose sufficient to provide significant vertical electrical isolation from underlying regions of the epitaxial layer semi-insulating with minimal detrimental effect on the electrical characteristics of the semiconductor layer.
REFERENCES:
patent: 3824133 (1974-07-01), D'Asaro et al.
patent: 4124826 (1978-11-01), Dixon et al.
patent: 4290825 (1981-09-01), Dearnaley et al.
patent: 4391651 (1983-07-01), Yoder
patent: 4394180 (1983-07-01), Dearnaley et al.
patent: 4539743 (1985-09-01), Anthony et al.
Chand et al., "Ion-Implantation and Activation Behavior of Si in MBE-Grown GaAs on Si Substrates for GaAs MESFET's", IEEE Electron Device Letters, May, 19, 1987, pp. 185-187.
Short et al., "Implantation Tailoring of Electrically Active Dopant Profiles in GaAs", Journal Applied Physics, Aug. 1, 1988, pp. 212-221.
Pruniaux et al., "Compensation of N-Type GaAs by Proton Bombardment", Proceedings Second Int'l Conference of Ion Implantation in Semiconductors, New York, 1971.
Foyt, A. "Isolation of Junction . . . Bombardment", Solid State Electronics, vol. 12, pp. 209-214, 1969.
Zavada, J., et al, "Hydrogen Depth Profiles . . . N-Type GaAs", J. Appl. Phys. 58(10), Nov. 1985, pp. 3731-3734.
Zavada, J. et al, "Depth Distributions . . . N-Type GaAs", J. Appl, Phys. 57(6), Mar. 1985, pp. 2299-2301.
Wilson, R., et al, "Proton, Deuteron, and Helium Implantation . . . Fabrication", J. Appl. Phys. 57(11), Jun. 1985, pp. 5006-5010.
Blood, P. "Carrier Removal in Dauterium Irradiated GaAs", The Institute of Physics Conf. Sec. No. 56(5), 1980, pp. 251-258.
Signon, F., et al, "Hot Electron Studies . . . 2.8 MeV Protons", Int. Conf. on Ion Implanation in Semiconductors May 4-7, 1970.
Brophy Martin J.
Hoskins Michael J.
Chaudhuri Olik
Electronic Decisions Inc.
Fourson G.
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