Pulse or digital communications – Spread spectrum – Direct sequence
Reexamination Certificate
2006-05-16
2006-05-16
Corrielus, Jean B. (Department: 2637)
Pulse or digital communications
Spread spectrum
Direct sequence
C375S375000, C375S349000, C714S796000
Reexamination Certificate
active
07046719
ABSTRACT:
A receiver (200) is provided receiving signals from differing base stations (BTSAand BTSB). The signal from BTSAis encoded using a first rate convolutional encoder while the signal transmitted from BTSBis encoded using a second rate convolutional encoder. Since the multiple base station links may result in a different number of symbols being received for each bit transmitted, the symbols received for each link cannot be simply combined. Therefore, in the preferred embodiment of the present invention, the resulting symbols are passed to multiple branch metric circuits (210–211), where branch metrics (μi) for the symbols are obtained. After the ithbranch metrics for the base stations are computed, the branch metrics for each base station are passed to a combiner (212) where they are combined.
REFERENCES:
patent: 3802967 (1974-04-01), Landany et al.
patent: 4404265 (1983-09-01), Manasevit
patent: 4482906 (1984-11-01), Hovel et al.
patent: 4523211 (1985-06-01), Morimoto et al.
patent: 4661176 (1987-04-01), Manasevit
patent: 4846926 (1989-07-01), Kay et al.
patent: 4882300 (1989-11-01), Inoue et al.
patent: 4891091 (1990-01-01), Shastry
patent: 4912087 (1990-03-01), Aslam et al.
patent: 4928154 (1990-05-01), Umeno et al.
patent: 4933956 (1990-06-01), Forney, Jr.
patent: 4963949 (1990-10-01), Wanlass et al.
patent: 4999842 (1991-03-01), Huang et al.
patent: 5141894 (1992-08-01), Bisaro et al.
patent: 5155658 (1992-10-01), Inam et al.
patent: 5159413 (1992-10-01), Calviello et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5202903 (1993-04-01), Okanoue
patent: 5221367 (1993-06-01), Chisholm et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh
patent: 5310707 (1994-05-01), Oishi et al.
patent: 5326721 (1994-07-01), Summerfelt
patent: 5358925 (1994-10-01), Neville Connell et al.
patent: 5393352 (1995-02-01), Summerfelt
patent: 5418216 (1995-05-01), Fork
patent: 5418389 (1995-05-01), Watanabe
patent: 5450812 (1995-09-01), McKee et al.
patent: 5453997 (1995-09-01), Roney, IV
patent: 5478653 (1995-12-01), Guenzer
patent: 5482003 (1996-01-01), McKee et al.
patent: 5514484 (1996-05-01), Nashimoto
patent: 5556463 (1996-09-01), Guenzer
patent: 5588995 (1996-12-01), Sheldon
patent: 5608737 (1997-03-01), Kimura et al.
patent: 5638408 (1997-06-01), Takaki
patent: 5670798 (1997-09-01), Schetzina
patent: 5674366 (1997-10-01), Hayashi et al.
patent: 5701333 (1997-12-01), Okanoue et al.
patent: 5731220 (1998-03-01), Tsu et al.
patent: 5735949 (1998-04-01), Mantl et al.
patent: 5741724 (1998-04-01), Ramdani et al.
patent: 5757844 (1998-05-01), Fukawa et al.
patent: 5757850 (1998-05-01), Takaki
patent: 5796757 (1998-08-01), Czaja
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 5874860 (1999-02-01), Brunel et al.
patent: 5912068 (1999-06-01), Jia
patent: 5916315 (1999-06-01), Ryan
patent: 5978365 (1999-11-01), Yi
patent: 5999815 (1999-12-01), TenBrook et al.
patent: 6002375 (1999-12-01), Corman et al.
patent: 6012160 (2000-01-01), Dent
patent: 6045626 (2000-04-01), Yano et al.
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6103008 (2000-08-01), McKee et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6108317 (2000-08-01), Jones et al.
patent: 6113690 (2000-09-01), Yu et al.
patent: 6143072 (2000-11-01), McKee et al.
patent: 6327316 (2001-12-01), Ikeda
patent: 6378107 (2002-04-01), Yoshinaka
patent: 6487255 (2002-11-01), Arslan et al.
patent: 6574289 (2003-06-01), Tran et al.
patent: 2001/0055334 (2001-12-01), Tiedemann
patent: 2002/0122392 (2002-09-01), Elezabi et al.
patent: 2003/0026359 (2003-02-01), Loeliger et al.
patent: 2004/0157609 (2004-08-01), Jalloul et al.
patent: 0342937 (1989-11-01), None
patent: 0455526 (1991-06-01), None
patent: 0250171 (1992-11-01), None
patent: 0514018 (1992-11-01), None
patent: 0602568 (1994-06-01), None
patent: 0607435 (1994-07-01), None
patent: 0999600 (2000-05-01), None
patent: 1001468 (2000-05-01), None
patent: 1319311 (1973-06-01), None
patent: 5208835 (1977-07-01), None
patent: 5413455 (1979-10-01), None
patent: 5508742 (1980-07-01), None
patent: 6110818 (1986-05-01), None
patent: 6303499 (1988-02-01), None
patent: 6313110 (1988-06-01), None
patent: 6319836 (1988-08-01), None
patent: 2000039 (1990-01-01), None
patent: 6327862 (1990-01-01), None
patent: 5048072 (1993-02-01), None
patent: 6334168 (1993-06-01), None
patent: 6232126 (1994-08-01), None
patent: 6291299 (1994-10-01), None
patent: 1123868 (1999-08-01), None
patent: 1126083 (1999-09-01), None
patent: 9914804 (1999-03-01), None
patent: 9963580 (1999-12-01), None
“Oriented Growth of SrTiO3Films on Si(100) Substrates Using in situ Cleaning by Excited Hydrogen,” H. Ishiwara et al., Mat. Res. Soc. Symp., vol. 116, 1988., pp. 369-374.
“A Preliminary Consideration of the Growth Behavior of CeO2, SrTiO3and SrVO3Films on Si Substrate,” Nagata et al., Thin Solid Films, 224, 1993, pp. 1-3.
“Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum,” Nagata et al., Jpn. J. Appl. Phys., vol. 30, No. 6b, 1991, pp. 1136-1138.
“Heteroepitaxial Growth of SrO Films on Si Substrates,” Kado et al., J. Appl. Phys., 61(6), 1987, pp. 2398-2400.
“Epitaxial Growth of Perovskite Type Oxide Films on Si Substrates,” H. Ishiwara et al., Mat. Res. Soc. Symp., vol. 220, 1991, pp. 595-600.
“Effects of Buffer Layers in Epitaxial Growth of SrTiO3Thin Film on Si(100),” Nakagawara et al., J. Appl. Phys. 78(12), 1995, pp. 7226-7230.
“A Proposal of Epitaxial Oxide Thin Film Structures for Future Oxide Electronics,” Suzuki et al., Materials Science and Engineering B41 (1996), pp. 166-173.
“Impact of GaAs Buffer Thickness on electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Substrates,” Carlin et al., Appl. Phys. Letter, vol. 76, No. 14, Apr. 2000, pp. 1884-1886.
“Epitaxial Integration of III-V Materials and Devices with Si Using Graded GeSi Buffers,” Ringel et al., 27thInternational Symposium on Compound Semiconductors, Oct. 2000.
“Progress in Compound-Semiconductor-on-Silicon-Heteroepitaxy with Fluoride Buffer Layers,” Zogg et al., J. Electrochem Soc., vol. 136 , No. 3, Mar. 1989, pp. 775-779.
“Oxide Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates,” Xiong et al., IEEE Photonics Tech Letters, vol. 12, No. 2, Feb. 2000, pp. 110-112.
“Investigation of PZT/?LSCO/Pt//Aerogel Thin Film Composites for Uncooled Pyroelectric IR Detectors,” Clem et al., Mat. Res. Soc. Symp. vol. 541, pp. 661-666.
“Bound-To-Quasi-Bound Quantum-Well Infrared Photodetectors,” Gunapala et al., NASA Tech Brief, vol. 22, No. 9.
“Monolithic InGaAs-on-silicon Short Wave Infrared Detector Arrays,” Joshi et al., Int'l. Society for Optical Engineering, vol. 2999, pp. 211-224.
“Nanostructure and Chemistry of a (100)Mg)/(100)GaAs Interface,” Bruley et al., Appl. Phys Lett. 65(5), Aug. 1994, pp. 564-566.
“Epitaxial MgO on Si(001) for Y-Ba-Cu-O Thin Film Growth by Pulsed Laser Deposition,” Fork et al., Appl. Phys Lett 58(20), May 1991, pp. 2294-2296.
“Dialectrics on Semiconductors,” Himpsel et al., Materials Science and Engineering, B1(1988), pp. 9-13.
“Epitaxial La 0.67 Sr 0.33 MnO3Magnetic Tunnel Junctions,” J. Appl. Phys. 81(8), Apr. 1997 pp. 5509-5511.
“Colossal Magnetoresistance Magnetic Tunnel Junctions Grown by Molecular-Beam Epitaxy,” O'Donnell et al., Appl. Physics Letters, bol. 76, No. 14, Apr. 2000, pp. 1914-1916.
“Integration of GaAs on Si using a spinel buffer layer, IBM Technical Bulletin,” vol. 30, No. 6, Nov. 1987, p. 365.
“GaInAs Superconducting FET,” IBM Technical Bulletin, vol. 36, No. 8, Aug. 1993, p. 655.
“Epitaxi
Chen Jiangnan
Jalloul Louay A
Luz Yuda
Rotstein Ron
Anolick Simon B.
Corrielus Jean B.
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