Static information storage and retrieval – Addressing – Particular decoder or driver circuit
Reexamination Certificate
2007-10-22
2009-11-03
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Addressing
Particular decoder or driver circuit
C365S154000, C365S200000, C365S230080
Reexamination Certificate
active
07613067
ABSTRACT:
A Static Random Access Memory (SRAM) cell is provided with an improved robustness to radiation induced soft errors. The SRAM cell includes the following elements. First and second storage nodes are configured to store complementary voltages. Access transistors are configured to selectively couple the first and second storage nodes to a corresponding bit line. Drive transistors are configured to selectively couple one of the first and second storage nodes to ground. Load transistors are configured to selectively couple the other one of the first and second storage nodes to a power supply. At least one stabilizer transistor is configured to provide a corresponding redundant storage node and limit feedback between the first and second storage nodes. The redundant storage node is capable of restoring the first or second storage nodes in case of a soft error.
REFERENCES:
patent: 2006/0125547 (2006-06-01), Maymandi-Nejad et al.
patent: 2006/0187724 (2006-08-01), Pineda De Gyvez et al.
patent: 2007/0177419 (2007-08-01), Sachdev et al.
patent: 2008/0019162 (2008-01-01), Ogura et al.
Jahinuzzaman Shah M
Sachdev Manoj
Gowling Lafleur Henderson LLP
Nguyen Hien N
Nguyen Tuan T
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