Soft error robust static random access memory cell storage...

Details Soft error robust static random access memory cell storage... Soft error robust static random access memory cell storage...

2011-01-18

2011-01-18

Elms, Richard (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S154000, C365S200000, C365S230080

Reexamination Certificate

active

07872938

ABSTRACT:
A Static Random Access Memory (SRAM) cell storage configuration is described, having an improved robustness to radiation induced soft errors. The SRAM cell storage configuration comprises the following elements. First and second storage nodes are configured to store complementary voltages. Drive transistors are configured to selectively couple one of the first and second storage nodes to ground. Load transistors are configured to selectively couple the other one of the first and second storage nodes to a power supply. At least one stabilizer transistor is configured to provide a corresponding redundant storage node and limit feedback between the first and second storage nodes, the redundant storage node being capable of restoring the first or second storage nodes in case of a soft error.

REFERENCES:
patent: 7613067 (2009-11-01), Sachdev et al.

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