Soft-error rate hardened pulsed latch

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Particular stable state circuit

Reexamination Certificate

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C327S218000

Reexamination Certificate

active

07038515

ABSTRACT:
A latch includes a memory unit, a transfer unit, an inversion unit, and an output unit. The Memory unit includes a number of storage nodes. The transfer unit transfers a data from a data input node to the storage nodes via a plurality of data paths. Each of the data paths includes a pass element controlled by a pulse. The inversion unit inverts the data before the data is transferred from the data input node to at least one of the storage nodes. The output unit outputs the data from the memory unit to a latch output node. The memory unit, the transfer unit, the inversion unit, and the output unit of the latch form a soft-error rate hardened latch structure with a reduced number of elements and reduced power consumption.

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patent: 6121807 (2000-09-01), Klass et al.
patent: 6566927 (2003-05-01), Park et al.
patent: 2004/0095175 (2004-05-01), Chalasani
patent: 5-37305 (1993-02-01), None
Calin, T., “Upset Hardened Memory Design for Submicron CMOS Technology”,IEEE Transactions on Nuclear Science, 43, (Dec. 1996),2874-2877.
Hazucha, Peter, “Measurements and anlysis of SER tolerant latch in a 90nm dual-Vt CMOS process”,Proceedings of the Custom Integrated Circuits Conference, (2003),617-620.

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