Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w

Details Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w

1998-03-23

1999-12-28

Breneman, Bruce

Etching a substrate: processes

Forming or treating article containing magnetically...

216 40, B44C 122, C23F 100

Patent

active

06007731&

ABSTRACT:
A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. The is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed employing the method of the invention.

REFERENCES:
patent: 3864751 (1975-02-01), Beaulieu et al.
patent: 4024489 (1977-05-01), Bajorek et al.
patent: 4713708 (1987-12-01), Kroubi et al.
patent: 4879619 (1989-11-01), Fontana, Jr. et al.
patent: 5532892 (1996-07-01), Nix et al.
patent: 5567331 (1996-10-01), Kajitani
patent: 5637235 (1997-06-01), Kim
patent: 5658469 (1997-08-01), Jennison
patent: 5753131 (1998-05-01), Choukh et al.

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