Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w

Details Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w Soft adjacent layer (SAL) magnetoresistive (MR) sensor element w

1999-05-27

2000-07-18

Letscher, George J.

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

G11B 539, G01B 714

Patent

active

060915897

ABSTRACT:
Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.

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