Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-05-03
2011-05-03
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE31028, C204S298130
Reexamination Certificate
active
07935558
ABSTRACT:
A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.
REFERENCES:
patent: 4027367 (1977-06-01), Rondeau
patent: 4356073 (1982-10-01), McKelvey
patent: 4915745 (1990-04-01), Pollock et al.
patent: 5040589 (1991-08-01), Bradley et al.
patent: 5435965 (1995-07-01), Mashima et al.
patent: 5522535 (1996-06-01), Ivanov et al.
patent: 5626688 (1997-05-01), Probst et al.
patent: 5728231 (1998-03-01), Negami et al.
patent: 5814195 (1998-09-01), Lehan et al.
patent: 5904966 (1999-05-01), Lippens
patent: 6020556 (2000-02-01), Inaba et al.
patent: 6310281 (2001-10-01), Wendt et al.
patent: 6372538 (2002-04-01), Wendt et al.
patent: 6500733 (2002-12-01), Stanbery
patent: 6525264 (2003-02-01), Ouchida et al.
patent: 6559372 (2003-05-01), Stanbery
patent: 6593213 (2003-07-01), Stanbery
patent: 6690041 (2004-02-01), Armstrong et al.
patent: 6736986 (2004-05-01), Stanbery
patent: 6750394 (2004-06-01), Yamamoto et al.
patent: 6787692 (2004-09-01), Wada et al.
patent: 6797874 (2004-09-01), Stanbery
patent: 6822158 (2004-11-01), Ouchida et al.
patent: 6852920 (2005-02-01), Sager et al.
patent: 6878612 (2005-04-01), Nagao et al.
patent: 6881647 (2005-04-01), Stanbery
patent: 6936761 (2005-08-01), Pichler
patent: 6987071 (2006-01-01), Bollman et al.
patent: 7045205 (2006-05-01), Sager
patent: 7115304 (2006-10-01), Roscheisen et al.
patent: 7122392 (2006-10-01), Morse
patent: 7122398 (2006-10-01), Pichler
patent: 7141449 (2006-11-01), Shiozaki
patent: 7148123 (2006-12-01), Stanbery
patent: 7163608 (2007-01-01), Stanbery
patent: 7194197 (2007-03-01), Wendt et al.
patent: 7196262 (2007-03-01), Gronet
patent: 7227066 (2007-06-01), Roscheisen et al.
patent: 7235736 (2007-06-01), Buller et al.
patent: 7247346 (2007-07-01), Sager et al.
patent: 7253017 (2007-08-01), Roscheisen et al.
patent: 7259322 (2007-08-01), Gronet
patent: 7262392 (2007-08-01), Miller
patent: 7267724 (2007-09-01), Tanaka et al.
patent: 7271333 (2007-09-01), Fabick et al.
patent: 7291782 (2007-11-01), Sager et al.
patent: 7306823 (2007-12-01), Sager et al.
patent: 7319190 (2008-01-01), Tuttle
patent: 7374963 (2008-05-01), Basol
patent: 7544884 (2009-06-01), Hollars
patent: 2005/0109392 (2005-05-01), Hollars
patent: 2007/0074969 (2007-04-01), Simpson et al.
patent: 2007/0074970 (2007-04-01), Purdy et al.
patent: 2007/0283996 (2007-12-01), Hachtmann et al.
patent: 2007/0283997 (2007-12-01), Hachtmann et al.
patent: 2007/0289624 (2007-12-01), Kuriyagawa et al.
patent: 2008/0000518 (2008-01-01), Basol
patent: 2008/0053519 (2008-03-01), Pearce et al.
patent: 2008/0142071 (2008-06-01), Dom et al.
patent: 2008/0169025 (2008-07-01), Basol et al.
patent: 2008/0283389 (2008-11-01), Aoki
patent: 2008/0314432 (2008-12-01), Paulson et al.
patent: 2009/0014049 (2009-01-01), Gur et al.
patent: 2009/0014057 (2009-01-01), Croft et al.
patent: 2009/0014058 (2009-01-01), Croft et al.
patent: 2010/0108503 (2010-05-01), Bartholomeusz et al.
patent: 2010/0133093 (2010-06-01), Mackie et al.
patent: 2010/0227066 (2010-09-01), Chung
patent: 2010/0258191 (2010-10-01), Mackie et al.
patent: 11-274534 (1999-10-01), None
patent: 11-298016 (1999-10-01), None
patent: 2006-165386 (2006-06-01), None
patent: 10-0743923 (2007-07-01), None
patent: 10-2009-0034078 (2009-04-01), None
U.S. Appl. No. 12/907,551, filed Oct. 19, 2010 (26 pages).
U.S. Appl. No. 12/907,652, filed Oct. 19, 2010 (26 pages).
International Search Report and Written Opinion, International Application PCT/US2010/030454. International Searching Authority: Korean Intellectual Property Office (ISA/KR), Nov. 12, 2010.
International Search Report and Written Opinion, Intl. Application PCT/US2010/030456, International Search Authority: Korean Intellectual Property Office (ISA/KR), Nov. 17, 2010.
U.S. Appl. No. 12/314,519, filed Dec. 11, 2008, Hollars et al.
U.S. Appl. No. 12/379,427, filed Feb. 20, 2009, Schmidt, Chris.
U.S. Appl. No. 12/379,428, filed Feb. 20, 2009, Schmidt, Chris.
U.S. Appl. No. 12/385,572, filed Apr. 13, 2009, Mackie et al.
U.S. Appl. No. 12/385,571, filed Apr. 13, 2009, Juliano et al.
Bodegård et al., “The influence of sodium on the grain structure of CuInSo2films for photovoltaic applications,” 12th European Photovoltaic Solar Energy Conference, Proceedings of the International Conference, Amsterdam, The Netherlands, Apr. 11-15, 1994, Hill et al. Ed., vol. II, 1743-1746.
Contreras et al., “On the role of Na and modifications to Cu(In,Ga)Se2absorber materials using thin-MF (M=Na, K, Cs) precursor layers,” 26thIEEE PVSC, Anaheim, California, Sep. 30-Oct. 3.1997, 359-382.
Devaney et al., “Recent improvement in CuInSe2/ZnCdS thin film solar cell efficiency,” 18th IEEE Photovoltaic Spec. Conf., 1985, New York, 1733-1734.
Evbuomwan et al., “Concurrent materials and manufacturing process selection in design function deployment, Concurrent Engineering: Research and Applications,” Jun. 1995, 3(2):135-144.
Granath el., “Mechanical issues of NO back contracts for Cu(In,Ga)Se2devices,” 13th European Photovoltaic Solar Energy Conference, Proceedings of the International Conference, Nice, France, Oct. 23-27, 1995, Frefesleben et al. Ed., vol. II, 1983-1988.
Hedström et al., “ZnO/CdS/Cu(In,Ge)Se2thin film solar cells with Improved performance,” 23rdIEEE Photovoltaic Specialists Conference, Louisville, Kentucky, May 10-14, 1993, 364-371.
Mickelsen et al, “High photocurrent polycrystalline thin-film CdS/CuInSe2solar cell,” Appl. Phys. Lett., Mar. 1, 1980, 36(5):371-373.
Mohamed et al., “Correlation between structure, stress and optical properties in direct current sputtered molybdenum oxide films,” Thin Solid Films, 2003, 429:135-143.
Probst et al., “The impact of controlled sodium incorporated on rapid thermal processed Cu(InGa)Se2-thin films and devices,” First WCPEC, Hawaii, Dec. 5-9, 2004,144-147.
Ramanath et al., “Properties of 19.2% Efficiency ZnO/CdS/CuInGaSe2Thin-film Solar Cells,” Progress in Photovoltaics: Research and Applications, 2003, 11:225-230.
Rau et al., “Cu(In,Ga)Se2solar cells,” Clean Electricity From Photovoltaics, Series on Photoconversion of Solar Energy, vol. 1, 2001, Archer et al. Ed., Chapter 7, 277-345.
Rudmann et al., “Effects of NaF coevaporatlon on structural properties of Cu(In,Ge)Se2thin films,” Thin Solid Films, 2003, 431-432:37-40.
Sakurai et al,. “Properties of Cu(In,Ga)Se2:Fe Thin Films for Solar Cells,” Mater. Res. Soc. Symp. Proc., 2005, 885:F14.12.1-F.14.12.5.
Scofied et al, “Sodium diffusion, selenization, and microstructural effects associated with various molybdenum back contact layers for Cis-based solar cells,” Proc. of the 24thIEEE Photovoltaic Specialists Conference, New York, 1995,164-167.
So et al., “Properties of Reactively Sputtered Mo1-xOxFilms,” Appl. Phys. A, 1988,45:285-270.
Stolt et al., “ZnO/CdS/CuInSe2thin-film solar cells with improved performance,” Appl. Phys. Lett., Feb. 8, 1993, 62(6):597-599.
Windischmann, Henry, “Intrinsic Stress in Sputter-Deposited Thin Films,” Critical Reviews in Solid State and Materials Science, 1992, 17(6):547-596.
Yun et al., “Fabrication of CIGS solar cells with a Na-doped Mo layer on a Na-free substrate,” Thin Solid Films, 2007,515:5876-5879.
Juliano Daniel R.
Mackie Neil
Tas Robert
Ziani Abdelouahab
MiaSole
Shook Daniel
Smith Matthew S
The Marbury Law Group PLC
LandOfFree
Sodium salt containing CIG targets, methods of making and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sodium salt containing CIG targets, methods of making and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sodium salt containing CIG targets, methods of making and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2686878