Snapback clamp having low triggering voltage for ESD protection

Details Snapback clamp having low triggering voltage for ESD protection Snapback clamp having low triggering voltage for ESD protection

2006-11-28

2006-11-28

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S141000, C257S173000, C257S355000, C257S367000

Reexamination Certificate

active

07141831

ABSTRACT:
An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body adjacent the first P type region so as to form a PN junction having a width Wn near a surface of the semiconductor body. A further P type region is also disposed in the body to form a further PN junction with the N type region, with the junction having a width Wp near the body surface, with Wp being at least 1.5 times width Wn. A further N type region is provided which is electrically connected to a cathode terminal of the device and forming a third PN junction with the further N type region.

REFERENCES:
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6690066 (2004-02-01), Lin et al.
patent: 6777721 (2004-08-01), Huang et al.
patent: 6972463 (2005-12-01), Cheng
patent: 2002/0175377 (2002-11-01), Lin

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