Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecul

Details Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecul Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecul

1975-03-28

1976-03-02

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156610, 252 623GA, 357 63, H01L 21203, H01L 21363

Patent

active

039416240

ABSTRACT:
In order to insure that the doping profiles of Sn-doped Group III(a)-V(a) Ga-containing layers grown by molecular beam epitaxy follow relatively closely the time-intensity profile of the dopant beam, the substrate temperature should not exceed about 550.degree.C.

REFERENCES:
patent: 3612958 (1971-10-01), Saito et al.
patent: 3751310 (1973-08-01), Cho
patent: 3839084 (1974-10-01), Cho et al.
davey et al., "Epitaxial GaAs Films Deposited by Vacuum Evaporation," J. Applied Physics, Vol. 39, No. 4, Mar. 1968, pp. 1941-1948.
Cho et al., "Molecular Beam Epitaxy of GaAs, Al.sub.x Ga.sub.1.sub.-x As and GaP," 1970 Symposium on GaAs, Paper No. 2, pp. 18-29.
Cho et al., "Epitaxy of Silicon Doped Gallium Arsenide by Molecular Beam Method," Metallurgical Trans., Vol. 2, Mar. 1971, pp. 777-780.
Cho et al., "Properties of Schottky . . . GaAs . . . . . . Epitaxial Layers," J. Applied Physics, Vol. 45, No. 3, Mar. 1974, pp. 1258-1263.

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