Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1996-01-31
1998-10-06
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257164, 257166, H01L 2974, H01L 31111
Patent
active
058180745
ABSTRACT:
A semiconductor thyristor has multiple different semiconductor layers with regions arranged in predetermined configurations to cause a plasma of carriers to flow in an expanding volume over a finite time to reach a full conduction condition, after the thyristor is switched into a conductive condition. A smooth current or connectivity transition occurs between a nonconductive state and a conductive state, thereby eliminating the typical, more instantaneous and discontinuous on-switching conductivity transitions. The finite and increased time to reach the full conduction inherently reduces the di/dt effect created by switching the thyristor. The reduced di/dt substantially reduces the radiated and conductive interference signals generated by switching the thyristor. The growth in the size of the plasma is controlled using configurations of the semiconductor structure and doping profiles within the semiconductor layers.
REFERENCES:
patent: 3641403 (1972-02-01), Nakata
patent: 4903105 (1990-02-01), Najji
patent: 5461242 (1995-10-01), Muraoka et al.
59 014671 A (Nippon Denki K.K.), Jan. 25, 1984.
Patent Abstracts of Japan, vol. 7, No. 58 (E-163), Mar. 10, 1983 & JP 57 204163 A (Toyo Denki Seizo K.K.), Dec. 14, 1982.
Nelson Richard E.
Umberger David K.
Beacon Light Products, Inc.
Fahmy Wael
Ley John R.
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