Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-01-25
2008-07-29
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S164000, C438S341000, C438S413000, C438S479000
Reexamination Certificate
active
07405098
ABSTRACT:
A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. Then, the method conformally deposits Ge overlying the silicon nitride insulator layer and Si seed access region, forming a Ge layer with a first surface roughness, and smoothes the Ge layer using a chemical-mechanical polish (CMP) process. Typically, the method encapsulates the Ge layer and anneals the Ge layer to form a LPE Ge layer. A Ge layer is formed with a second surface roughness, less than the first surface roughness. In some aspects, the method forms an active device in the LPE Ge layer.
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Burmaster Allen
Evans David R.
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nguyen Cuong Q
Sharp Laboratories of America Inc.
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